2003. 7. 24
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SEMICONDUCTOR
TECHNICAL DATA
KTB631K
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
LOW FREQUENCY POWER AMP,
MEDIUM SPEED SWITCHING APPLICATIONS
FEATURES
High breakdown voltage V
CEO
120V, high current 1A.
Low saturation voltage and good linearity of h
FE
.
MAXIMUM RATING (Ta=25 )
TO-126
H
J
MILLIMETERS
C
E
F
G
D
A
B
DIM
A
C
E
F
G
H
J
K
M
O
P
N
L
D
1. EMITTER
2. COLLECTOR
3. BASE
K
L
M
N
O
P
8.3 MAX
5.8
0.7
3.2 0.1
3.5
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 0.15
2.3 0.1
0.65 0.15
1.6
3.4 MAX
B
1
2
3
+
_
+
_
+
_
15.50 0.5
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
(1) Classification Y:100 200, GR:160 320
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-120
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-1
A
I
CP
-2
Collector Power
Dissipation
Ta=25
P
C
1.5
W
Tc=25
8
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut of Current
I
CBO
V
CB
=-50V, I
E
=0
-
-
-1
A
Emitter Cut of Current
I
EBO
V
EB
=-4V, I
C
=0
-
-
-1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10 A
-120
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA
-120
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10 A
-5
-
-
V
DC Current Gain
h
FE
(1) Note
V
CE
=-5V, I
C
=-50mA
100
-
320
h
FE
(2)
V
CE
=-5V, I
C
=-500mA
20
-
-
Gain Bandwidth Product
f
T
V
CE
=-10V, I
C
=-50mA
-
110
-
MHz
Output Capacitance
C
ob
V
CB
=-10V, f=1MHz
-
30
-
pF
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA
-
-0.15
-0.4
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-500mA, I
B
=-50mA
-
-0.85
-1.2
V
Switching Time
Turn-on Time
t
on
I
B1
B2
I
20sec
1uF
1uF
24
1
100
CE
V =-12V
2V
-12V
I =10I =-10I =50mA
C
B1
B2
-
80
-
nS
Turn-off Time
t
off
-
100
-
Storage Time
t
stg
-
600
-
2003. 7. 24
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KTB631K
Revision No : 2
C
COLLECTOR CURRENT I (A)
0
0
BASE-EMITTER VOLTAGE V (V)
BE
C
BE
V - I
V - I
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
C
0
COLLECTOR CURRENT I (A)
COLLECTOR CURRENT I (mA)
COLLECTOR EMITTER SATURATION
-1
-3
-10
-30
CE(sat)
-0.01
V - I
C
CE
C
-1
-2
-3
-4
-5
-6
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
Tc=25 C
-20
-15
-12
-10
-8
-6
-4
-2
I =0mA
B
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
V =-5V
CE
CE
COLLECTOR-BASE VOLTAGE V (V)
OUTPUT CAPACITANCE C (pF)
5
5
-3
-1
ob
C - V
ob
CB
-10
-30
-100
10
30
50
100
200
f=1MHz
C
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
-3
-1
-30
-10
FE
10
h - I
FE
C
-100
-300
-1k
-5k
30
50
100
300
500
V =-5V
CE
CE(sat)
C
VOLTAGE V (V)
-100
-300
-1k
-3k
-0.03
-0.05
-0.1
-0.3
-0.5
-1.0
I /I =10
C B
COLLECTOR CURRENT I (A)
0.005
C
10
1
COLLECTOR-EMITTER VOLTAGE V (V)
CE
A S O
COLLECTOR DISSIPATION P (W)
C
0
AMBIENT TEMPERATURE Ta ( C)
0
Pc - Ta
20
40
60
80
100 120 140 160
2
4
6
8
10
infini
te heat sink
No Heat Sink
100
0.01
0.03
0.1
0.3
0.5
1
3
5
0.05
10mS
1mS 100S
DC
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